Title :
Semiconductor models for a 20 MHz converter
Author_Institution :
AT&T Bell Lab., Parsippany, NJ, USA
Abstract :
The semiconductor models described allow quantitative results not possible with the simple switch models of conventional circuit simulations. Average and instantaneous semiconductor dissipation and their temperature behavior can be calculated. At megahertz frequencies, currents may be difficult to measure without disturbing the circuit. For 20 MHz converter simulation, semiconductor nonlinear C-V and I-V characteristics are modeled.<>
Keywords :
power convertors; semiconductor device models; 20 MHz; average semiconductor dissipation; instantaneous semiconductor dissipation; nonlinear C-V characteristics; power convertors nonlinear I-V characteristics; semiconductor models; temperature behavior; Capacitance-voltage characteristics; Circuits; Computational modeling; Equations; Parameter extraction; Polynomials; Schottky diodes; Semiconductor diodes; Temperature; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1990. APEC '90, Conference Proceedings 1990., Fifth Annual
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/APEC.1990.66379
