DocumentCode :
1657639
Title :
Core-shell GaAs-AlAs nanowires grown by MBE
Author :
Shtrikman, Hadas ; Popovitz-Biro, Ronit ; Von Huth, Palle ; Kretinin, Andrey ; Heiblum, Moty
Author_Institution :
Braun Center for Submicron Res., Weizmann Inst. of Sci., Rehovot, Israel
fYear :
2010
Firstpage :
103
Lastpage :
104
Abstract :
The objective of this work was to achieve control over MBE growth of GaAs core-shell nanowires using the gold assisted VLS method, thereby facilitating formation of either pure Wurtzite (WZ) or pure Zinc Blende (ZB) wires. Growth of WZ type wires relies on initial nucleation of a thin (¿ 10 nm) GaAs wire which, based upon theoretical calculations, is expected to be free of SF. Preferential nucleation of pure ZB type wires required a respective reduction of the supersaturation, so as to simulate the conditions, which dominate the growth of epitaxy/bulk material. A shell composed of AlAs layer and a capping GaAs layer was applied in situ to both types of wires in order to form confined structures for optical and electronic applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; nucleation; semiconductor quantum wires; GaAs-AlAs; MBE growth; capping layer; core-shell nanowire growth; epitaxy-bulk material; preferential nucleation; pure wurtzite wires; pure zinc blende wires; supersaturation; Epitaxial growth; Gallium arsenide; Gold; Molecular beam epitaxial growth; Nanowires; Optical devices; Optical materials; Scanning electron microscopy; Substrates; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424555
Filename :
5424555
Link To Document :
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