Title :
Effect of the length of silicon nanodot/wire on band gap
Author :
Hassan, Walid M. I. ; Verma, A. ; Nekovei, Reza ; Khader, Mahmoud M. ; Anantram, Manjeri P.
Author_Institution :
Gas Process. Center, Qatar Univ., Doha, Qatar
Abstract :
We will report on the role of the length of silicon nanowire (SNW) in determining the band gap of a structure. We find that the band gap decreases with SNW length for the same diameter and approaches the band gap for an ideal infinitely long SNW. The H/T atomic ratio can be used to express the S/V ratio, which is approximately linearly related to band gap value.
Keywords :
elemental semiconductors; energy gap; nanowires; silicon; Si; atomic ratio; band gap; silicon nanodot; silicon nanowire; Atomic layer deposition; Atomic measurements; Educational institutions; Geometry; Hydrogen; Photonic band gap; Silicon; Length; Silicon nanowire; Theoretical; band gap;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968131
