DocumentCode
1657652
Title
Modeling the effects of traps on the I-V characteristics of GaAs MESFETs
Author
Fiegna, Claudio ; Filicori, Fabio ; Vannini, Giorgio ; Venturi, Franco
Author_Institution
Istituto di Ingegneria, Ferrara Univ., Italy
fYear
1995
Firstpage
773
Lastpage
776
Abstract
This paper provides an investigation on the effects of deep level traps on the large-signal I-V characteristics of GaAs MESFETs by means of measurements and physics-based device simulations; results give clear indications that pulsed I-V measurements are sufficient in order to characterize large-signal AC device operation and provide a good physical basis for circuit-level large signal MESFET models
Keywords
III-V semiconductors; Schottky gate field effect transistors; characteristics measurement; deep levels; electron traps; gallium arsenide; semiconductor device models; AC device operation; GaAs; MESFETs; circuit-level large signal MESFET models; deep level traps; large-signal I-V characteristics; physics-based device simulations; pulsed I-V measurements; semiconductor device measurements; Circuit simulation; Dispersion; FETs; Frequency measurement; Gallium arsenide; MESFETs; Pulse circuits; Pulse measurements; Shape measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499332
Filename
499332
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