Title :
A novel implementation of noise analysis in general-purpose PDE-based semiconductor device simulators
Author :
Bonani, F. ; Ghione, G. ; Pinto, M.R. ; Smith, R.K.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Italy
Abstract :
The paper presents an efficient technique to evaluate the noise of bipolar or monopolar devices by means of the Impedance Field Method, implemented through a two-carrier drift-diffusion (DD) multidimensional numerical model. The approach, based on Branin´s method for the noise analysis of networks, extends the adjoint approach already proposed for monopolar noise analysis. Preliminary results are presented on the analysis of pn junction diodes and FET´s
Keywords :
carrier lifetime; field effect transistors; semiconductor device models; semiconductor device noise; semiconductor diodes; Branin´s method; FET; PDE-based semiconductor device simulators; adjoint approach; bipolar devices; impedance field method; monopolar devices; noise analysis; pn junction diodes; two-carrier drift-diffusion multidimensional numerical model; Analytical models; Fluctuations; Green´s function methods; Impedance; Integral equations; Microscopy; Multidimensional systems; Noise generators; Semiconductor device noise; Semiconductor devices;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499333
