DocumentCode
1657666
Title
A Monte Carlo Algorithm Simulation of Antiferroelectricity in Sandwich Structural Film
Author
Sun Yuxia ; Liu Hongri
Author_Institution
Coll. of Comput. Sci. & Technol., Hubei Normal Univ., Huangshi, China
fYear
2011
Firstpage
1
Lastpage
3
Abstract
We prepared BaTiO3/BiFeO3/BaTiO3 sandwich structural film by sol-gel process. Antiferroelectric hysteresis loop was observed in the sandwich structural film. A Monte Carlo simulation based on Ising model using a 100×100 polarization grid is carried out. Simulating result matches to the experimental result very well and it shows that the antiferroelectricity is originated from the antiferroelectric couple between the different ferroelectric layers.
Keywords
Ising model; Monte Carlo methods; antiferroelectric materials; antiferroelectricity; barium compounds; bismuth compounds; dielectric thin films; sandwich structures; sol-gel processing; BaTiO3-BiFeO3-BaTiO3; Ising model; Monte Carlo simulation; antiferroelectric couple; antiferroelectric hysteresis loop; antiferroelectricity; polarization grid; sandwich structural film; sol-gel process; Educational institutions; Electric fields; Films; Hysteresis; Monte Carlo methods; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Communications, Networking and Mobile Computing (WiCOM), 2011 7th International Conference on
Conference_Location
Wuhan
ISSN
2161-9646
Print_ISBN
978-1-4244-6250-6
Type
conf
DOI
10.1109/wicom.2011.6040637
Filename
6040637
Link To Document