• DocumentCode
    1657673
  • Title

    Highly efficient organic light-emitting diodes based on the red phosphorescent emitter sensitized by the green emitting iridium complex

  • Author

    Seo, Ji Hyun ; Choi, Eun Young ; Kim, Jun Ho ; Seul Ong Kim ; Lee, Kum Hee ; Yoon, Seung Soo ; Kim, Young Kwan

  • Author_Institution
    Dept. of Inf. Display, Hongik Univ., Seoul, South Korea
  • fYear
    2010
  • Firstpage
    732
  • Lastpage
    733
  • Abstract
    We demonstrated the red phosphorescent organic light-emitting diodes with sensitizer, iridium(III) tris(2-phenylpyridine) [Ir(ppy)3]. The devices with sensitizer showed a significant improvement in a luminance and efficiency compared to those without sensitizer. Moreover, the electroluminescent (EL) spectra of devices with sensitizer show a similar emission peak with photoluminescent (PL) spectra of iridium(III) bis(2-phenylquinoline)(acetylaceton) [Ir(pq)2(acac)] under the optimized doping ratio of Ir(pq)2(acac) and Ir(ppy)3. It is because that the triplet metal-to-ligand charge transfer (3MLCT) state of Ir(ppy)3 is higher than that of Ir(pq)2(acac) and the intra-molecular energy transfer (IMET) time (within ns time scale) from the ppy-centered 3MLCT state to the pq-centered 3MLCT state is shorter than the radiative lifetime (within ¿s time scale) of Ir(ppy)3.
  • Keywords
    doping; electroluminescence; organic compounds; organic light emitting diodes; phosphorescence; photoluminescence; doping; electroluminescent spectra; green emitting iridium complex; highly efficient organic light-emitting diodes; intramolecular energy transfer time; iridium(III) bis(2-phenylauinoline)(acetylaceton); iridium(III) tris(2-phenylpyridine); photoluminescent spectra; radiative lifetime; red phosphorescent emitter; triplet metal-to-ligand charge transfer; Charge transfer; Chemistry; Displays; Doping; Electroluminescent devices; Glass; Indium tin oxide; Organic light emitting diodes; Phosphorescence; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424557
  • Filename
    5424557