• DocumentCode
    165774
  • Title

    Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

  • Author

    Ameen, Tarek ; Ilatikhameneh, Hesameddin ; Charles, J. ; Yuling Hsueh ; Sicong Chen ; Fonseca, J. ; Povolotskyi, Michael ; Rahman, Raziur ; Klimeck, Gerhard

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2014
  • fDate
    18-21 Aug. 2014
  • Firstpage
    921
  • Lastpage
    924
  • Abstract
    Self-assembled quantum dots are highly strained heterostructures, and a rigorous atomistic strain model is needed to predict the behavior of these devices. An anharmonic strain model reported by Lazarenkova, et al. [1] modifies the well-known harmonic Keating model [2] to include the effect of anharmonicity in the lattice potential. The Lazarenkova strain parameters were originally optimized to deliver correct Grüneisen parameters, however this optimization does not provide strain values that compare well to the values obtained in experiments on both quantum wells and dots. Our new approach in optimizing the model parameters to obtain correct biaxial strain ratio in quantum wells has resulted in a significant improvement in the quantum dot simulations in terms of reproducing experimental optical transitions.
  • Keywords
    Gruneisen coefficient; deformation; gallium compounds; indium compounds; quantum wells; self-assembly; semiconductor quantum dots; GaAs; Gruneisen parameters; InAs-GaAs; Lazarenkova strain parameters; anharmonic strain model optimization; anharmonicity effect; biaxial strain ratio; harmonic Keating model; highly strained heterostructure; lattice potential; optical transitions; quantum dot simulation improvement; quantum wells; realistic strain distributions; rigorous atomistic strain model; self-assembled quantum dots; strain values; Computational modeling; Gallium arsenide; Harmonic analysis; Manganese; Quantum dot lasers; Quantum dots; Strain; Anharmonic strain model; Biaxial strain ratio; Self-assembled quantum dots; Strain model optimization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
  • Conference_Location
    Toronto, ON
  • Type

    conf

  • DOI
    10.1109/NANO.2014.6968137
  • Filename
    6968137