DocumentCode
165774
Title
Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots
Author
Ameen, Tarek ; Ilatikhameneh, Hesameddin ; Charles, J. ; Yuling Hsueh ; Sicong Chen ; Fonseca, J. ; Povolotskyi, Michael ; Rahman, Raziur ; Klimeck, Gerhard
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2014
fDate
18-21 Aug. 2014
Firstpage
921
Lastpage
924
Abstract
Self-assembled quantum dots are highly strained heterostructures, and a rigorous atomistic strain model is needed to predict the behavior of these devices. An anharmonic strain model reported by Lazarenkova, et al. [1] modifies the well-known harmonic Keating model [2] to include the effect of anharmonicity in the lattice potential. The Lazarenkova strain parameters were originally optimized to deliver correct Grüneisen parameters, however this optimization does not provide strain values that compare well to the values obtained in experiments on both quantum wells and dots. Our new approach in optimizing the model parameters to obtain correct biaxial strain ratio in quantum wells has resulted in a significant improvement in the quantum dot simulations in terms of reproducing experimental optical transitions.
Keywords
Gruneisen coefficient; deformation; gallium compounds; indium compounds; quantum wells; self-assembly; semiconductor quantum dots; GaAs; Gruneisen parameters; InAs-GaAs; Lazarenkova strain parameters; anharmonic strain model optimization; anharmonicity effect; biaxial strain ratio; harmonic Keating model; highly strained heterostructure; lattice potential; optical transitions; quantum dot simulation improvement; quantum wells; realistic strain distributions; rigorous atomistic strain model; self-assembled quantum dots; strain values; Computational modeling; Gallium arsenide; Harmonic analysis; Manganese; Quantum dot lasers; Quantum dots; Strain; Anharmonic strain model; Biaxial strain ratio; Self-assembled quantum dots; Strain model optimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location
Toronto, ON
Type
conf
DOI
10.1109/NANO.2014.6968137
Filename
6968137
Link To Document