Hybrid digital/microwave HBTs for >30 Gb/s optical communications circuits

Author

Zampardi, P.J. ; Pierson, R.L. ; Runge, K. ; Yu, R. ; Beccue, S.M. ; Yu, J. ; Fitzsimmons, S. ; Wang, K.C.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1995

Firstpage

803

Lastpage

806

Abstract

The demand for higher bit rate communications systems requires the development of key chip sets using high speed technologies such as AlGaAs/GaAs HBTs. However, many of these circuits place conflicting demands on the device characteristics. We present device and circuit results using a hybrid of our digital and microwave HBT processes. This process results in high yield, high performance devices and circuits and is flexible enough to easily incorporate various epitaxial structures required by different chips. It also provides access to Schottky diodes allowing ADCs and shock-line structures to be fabricated with these HBTs

Keywords

III-V semiconductors; aluminium compounds; analogue-digital conversion; circuit optimisation; digital communication; gallium arsenide; heterojunction bipolar transistors; integrated circuit yield; microwave bipolar transistors; multiplexing equipment; optical communication equipment; wavelength division multiplexing; 30 Gbit/s; ADCs; AlGaAs-GaAs; Schottky diodes; device characteristics; epitaxial structures; hybrid digital/microwave HBTs; optical communications circuits; shock-line structures; yield; Bit rate; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Microwave circuits; Microwave communication; Multiplexing; Optical amplifiers; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499339

Filename

499339