• DocumentCode
    1657779
  • Title

    253-GHz fmax AlGaAs/GaAs HBT with Ni/Ti/Pt/Ti/Pt-contact and L-shaped base electrode

  • Author

    Yanagihara, Manabu ; Sakai, Hiroyuki ; Ota, Yorito ; Tanabe, Mitsuru ; Inoue, Kaoru ; Tamura, Akiyoshi

  • Author_Institution
    Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
  • fYear
    1995
  • Firstpage
    807
  • Lastpage
    810
  • Abstract
    We have developed a 253 GHz fmax AlGaAs/GaAs HBT with a C-doped (4×1019 cm-3) base layer, using two techniques to decrease the base resistance (RB): a new base ohmic contact system of Ni/Ti/Pt/Ti/Pt for the low contact resistivity and an L-shaped base electrode for the low base electrode resistance. To our knowledge, this fmax, value is the highest in GaAs based HBTs with the C-doped base layer. These techniques are very promising for high fmax HBTs with even the moderately doped base layer
  • Keywords
    III-V semiconductors; aluminium compounds; contact resistance; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; nickel; ohmic contacts; platinum; semiconductor device reliability; titanium; 253 GHz; AlGaAs-GaAs; HBT; L-shaped base electrode; Ni-Ti-Pt-Ti-Pt; base electrode resistance; base ohmic contact system; base resistance; contact resistivity; high fmax devices; Alloying; Conductivity; Contact resistance; Electrodes; Fabrication; Gallium arsenide; Gold; Heterojunction bipolar transistors; Ohmic contacts; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499340
  • Filename
    499340
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1657779