Reliability investigation of InGaP/GaAs heterojunction bipolar transistors

Author

Bahl, Sandeep R. ; Camnitz, Lovell H. ; Houng, Denny ; Mierzwinski, Marek ; Turner, John ; Lefforge, Dale

Author_Institution

Solid-State Technol. Lab., Hewlett-Packard Co., Palo Alto, CA, USA

fYear

1995

Firstpage

815

Lastpage

818

Abstract

During elevated-temperature bias stress, InGaP/GaAs HBTs grown by MOCVD show a medium-term degradation in current gain of about 20%, with an activation energy of 0.7 eV. They also show a corresponding decrease in base resistance and an increase in turn-on voltage. InGaP/GaAs HBTs grown by GSMBE, however, do not show this degradation. SIMS measurements show a five times greater hydrogen concentration of about 10¹⁹ cm^-3 in the base layer of the MOCVD-grown epi as compared with the GSMBE epi. The degradation can be explained in terms of acceptor depassivation due to hydrogen out-diffusion from the epi during stress

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; secondary ion mass spectra; semiconductor device reliability; GSMBE epi; InGaP-GaAs; MOCVD epi; SIMS; acceptor depassivation; activation energy; base resistance; current gain; elevated-temperature bias stress; heterojunction bipolar transistor; hydrogen out-diffusion; reliability; turn-on voltage; Chemical vapor deposition; Degradation; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Stress; Temperature; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499342

Filename

499342