Title :
Preparation of titanium silicide nanowires by APCVD method
Author :
Ren, Zhaodi ; Shen, Mei ; Han, Gaorong ; Weng, Wenjian ; Ma, Ning ; Du, Piyi
Author_Institution :
Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Titanium silicide nanowires were deposited at different deposition conditions on glass substrate by using SiH4, TiCl4 and N2 as the Si, Ti precursors and diluted gas respectively through atmosphere pressure chemical vapor deposition (APCVD) method. By using proper deposition conditions, orthorhombic TiSi single-crystal nanowires can be successful formed on the glass substrate. The diameters of nanowires that being formd are 15~40 nm while the length of the nanowires are about 1~2 ¿m.
Keywords :
chemical vapour deposition; nanowires; titanium compounds; APCVD method; TiSi; TiSi glass substrate; atmosphere pressure chemical vapor deposition; orthorhombic single-crystal nanowires; titanium silicide nanowires; Chemical vapor deposition; Conductivity; Fluid flow; Gases; Glass; Nanowires; Silicides; Silicon; Substrates; Titanium;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424561
