Direct tunneling N2O gate oxynitrides for low-voltage operation of dual gate CMOSFETs

Dual gate CMOSFETs with high performance were successfully realized by using 2.8 nm N₂O-oxynitrides as gate dielectrics. Unlike other fabrication procedures, ¹¹B⁺ ions instead of ⁴⁹BF₂⁺ were implanted into the gate electrodes of PMOSFETs. We demonstrated that boron diffusion through the 2.8 nm-oxynitrides is effectively blocked by the use of RTA. Substrate current due to hot-carrier effects was observed for NMOSFETs with T_ox=2.8 nm and L=0.5 μm even below 1 V. Gate-oxide leakage of surface-channel PMOSFETs is lower than that of NMOSFETs because of high barrier height for holes which significantly reduces hole direct tunneling compared with electron direct tunneling