High frequency surface acoustic wave filter using ZnO/diamond/Si structure

Author

Nakahata, H. ; Hachigo, A. ; Shikata, S. ; Fujimori, N.

Author_Institution

Sumitomo Electr. Ind. Ltd., Hyogo, Japan

fYear

1992

Firstpage

377

Abstract

The surface acoustic wave (SAW) characteristics in a ZnO/diamond/Si structure are studied. Using theoretical calculations, effective film thicknesses of ZnO and diamond providing high phase velocity and K2 are found. Based on these data, a SAW filter of a ZnO/diamond/Si structure is fabricated. It is shown that large velocities can be obtained as expected from theoretical calculation and that a high-frequency SAW filter can be fabricated with much larger scale interdigital transducers (IDTs) than those in conventional material systems. The results indicate that this material system will find broad application in high-frequency SAW filters and resonators

Keywords

II-VI semiconductors; diamond; piezoelectric semiconductors; piezoelectric thin films; piezoelectric transducers; silicon; surface acoustic wave filters; zinc compounds; HF SAW filter; ZnO-C-Si; ZnO/diamond/Si structure; effective film thicknesses; high phase velocity; interdigital transducers; piezoelectric II-VI semiconductor; Acoustic materials; Acoustic waves; Frequency; Piezoelectric films; SAW filters; Semiconductor films; Substrates; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1992. Proceedings., IEEE 1992

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-0562-0

Type

conf

DOI

10.1109/ULTSYM.1992.275978

Filename

275978