High endurance ultra-thin tunnel oxide for dynamic memory application

Author

Wann, Clement H J ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1995

Firstpage

867

Lastpage

870

Abstract

Ultra-thin tunnel oxide can conduct very high current through oxide via direct tunneling; charge-to-breakdown increases dramatically due to less oxide damage. These facts point to a possibility of using ultra-thin tunnel oxide in the floating-gate device structure for dynamic-memory applications. We chose MONOS structure in this study due to its immunity to defect-induced leakage and back-tunneling. The memory device exhibits fast WRITE/ERASE speed, high endurance, long data retention and non-destructive READ. Further improvements are expected through process optimization

Keywords

DRAM chips; MOS memory circuits; electric breakdown; integrated circuit measurement; integrated circuit reliability; leakage currents; tunnelling; DRAMs; MONOS structure; back-tunneling; charge-to-breakdown; data retention; defect-induced leakage; direct tunneling; dynamic memory application; endurance; floating-gate device structure; nondestructive read; process optimization; ultra-thin tunnel oxide; write/erase speed; Application software; Capacitors; EPROM; Insulation; MONOS devices; Nonvolatile memory; Random access memory; Silicon; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499354

Filename

499354