Title :
A 52 GHz VCO with low phase noise implemented in SiGe BiCMOS technology
Author :
Jia, Lin ; Cabuk, Alper ; Ma, Jian-Guo ; Yeo, Kiat Seng ; Do, Manh Anh
Author_Institution :
Center for Integrated Circuit & Syst., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A fully integrated 52 GHz millimeter wave LC VCO with -106 dBc/Hz phase noise at 600 kHz offset frequency and 0.93 GHz tuning range is reported in the paper using IBM BiCMOS-6HP technology. The output voltage swing of the VCO is about 0.4 Vp-p for the complementary cross-coupled topology with the buffer. A bipolar device is used as the tail transistor to supply constant a current to preserve the oscillation of the VCO. The parasitics due to interconnect metals are extracted from the layouts, the effects of those parasitics on the VCO´s performance are investigated. Based on the analyses, the optimized layout of the complementary VCO is obtained, the pre-layout and the post-layout simulations are compared and presented in this paper.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; integrated circuit design; integrated circuit noise; millimetre wave oscillators; phase noise; semiconductor materials; silicon compounds; voltage-controlled oscillators; 0.4 V; 0.93 GHz; 52 GHz; 600 kHz; BiCMOS technology; IBM BiCMOS-6HP technology; SiGe; bipolar device; complementary cross-coupled topology; complementary metal oxide semiconductor; interconnect metal; millimeter wave LC VCO; offset frequency; output voltage swing; phase noise; tail transistor; tuning range; voltage controlled oscillator; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Millimeter wave technology; Millimeter wave transistors; Paper technology; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators;
Conference_Titel :
System-on-Chip for Real-Time Applications, 2003. Proceedings. The 3rd IEEE International Workshop on
Print_ISBN :
0-7695-1944-X
DOI :
10.1109/IWSOC.2003.1213046
