Title :
Growth of the copper oxide nanowires from copper thin films deposited on silicon substrate
Author :
Park, Yeon-Woong ; Seong, Nak-Jin ; Yoon, Soon-Gil
Author_Institution :
Sch. of Nano Sci. & Technol., Chungnam Nat. Univ., Daejeon, South Korea
Abstract :
The growth mechanism of the CuO single crystal NWs for future device applications has been demonstrated using the copper films deposited on CuO buffered SiO2/Si substrates. The indispensible requirements for the CuO NWs growth from the copper films are the presence of the compressive stress in the copper films and the presence of the Cu2O seed phase on the copper films at a high temperature in air.
Keywords :
copper compounds; nanofabrication; nanowires; narrow band gap semiconductors; semiconductor growth; semiconductor quantum wires; CuO; CuO-SiO2-Si; Si; compressive stress; copper oxide nanowires; copper thin films; growth mechanism; silicon substrate; single crystal; Adhesives; Annealing; Copper; Nanowires; Semiconductor films; Semiconductor thin films; Silicon; Sputtering; Substrates; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424570
