Title :
Growth and characterizations of CoFe2O4-ZnO nanocomposite thin films
Author :
Li, D.F. ; Zhang, J.X. ; Dai, J.Y.
Author_Institution :
Dept. of Appl. Phys., Hong Kong Polytech. Univ., Kowloon, China
Abstract :
We demonstrate a self-assembled CoFe2O4-ZnO nanocomposite thin films deposited by pulsed-laser deposition. X-ray diffraction spectrum and transmission electron microscope images indicate that spinel CoFe2O4 and wurtzite ZnO phases are spontaneously separated during hetero-growth on a single-crystal SrTiO3 (001) substrate. Tapping atomic force microscopy and magnetic force microscopy were used to locally image the surface morphologies and magnetic domain patterns. The results reveal strong relationship between property and coupling in the two components. In the light of the amazing properties of ZnO in piezoelectricity and luminescence with the conventional magnetic property of CoFe2O4, this work opens up a new way for vertical nanocomposite heteroepitaxial films in electro-magnetic-optical multifunctional applications.
Keywords :
II-VI semiconductors; X-ray diffraction; atomic force microscopy; cobalt compounds; magnetic force microscopy; magnetic thin films; nanocomposites; photoluminescence; piezoelectric thin films; piezoelectricity; pulsed laser deposition; self-assembly; strontium compounds; thin films; transmission electron microscopy; zinc compounds; CoFe2O4-ZnO; SrTiO3; X-ray diffraction spectrum; electro-magnetic-optical multifunctional applications; hetero-growth; luminescence; magnetic domain patterns; magnetic force microscopy; nanocomposite heteroepitaxial films; nanocomposite thin films; piezoelectricity; pulsed-laser deposition; self-assembly; single-crystal (001) substrate; spinel phase; surface morphology; tapping atomic force microscopy; transmission electron microscope images; wurtzite phase; Atomic force microscopy; Magnetic force microscopy; Magnetic properties; Self-assembly; Sputtering; Substrates; Transmission electron microscopy; X-ray diffraction; X-ray imaging; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424572
