Title :
Flexible thin flim transistor using printed single-walled carbon nanotubes
Author :
Jang, Suk-Jae ; Ahn, Jong-Hyun
Author_Institution :
SKKU Adv. Inst. of Nanotechnol., Sungkyunkwan Univ., Suwon, South Korea
Abstract :
Flexible thin film transistors (TFT) were fabricated with randomly oriented single-walled carbon nanotubes (SWNTs) synthesized selectively on a designed array of catalyst photoresists using the plasma-enhanced chemical vapor deposition (PECVD) method. The process involves SWNTs growth on SiO2/Si substrates, followed by transfer-printing of tubes onto thin, flexible sheets of plastic. Electrical measurements on the resulting devices reveal good characteristics. These results might be of interest for various applications of SWNTs in flexible electronics.
Keywords :
carbon nanotubes; catalysis; flexible electronics; photoresists; plasma CVD; thin film transistors; C; PECVD; Si; SiO2-Si; SiO2-Si substrates; TFT; catalyst photoresists; electrical measurements; flexible electronics; flexible thin flim transistor; plasma-enhanced chemical vapor deposition; printed single-walled carbon nanotubes; randomly oriented single-walled carbon nanotubes; thin flexible plastic sheets; transfer-printing; Carbon nanotubes; Chemical vapor deposition; Plasma applications; Plasma chemistry; Plasma devices; Plasma measurements; Plasma properties; Resists; Substrates; Thin film transistors;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424575
