DocumentCode
1658363
Title
Structural characterization and cathodoluminescence of individual BN layers-sheathed CaS:Eu nanowires
Author
Lin, Jing ; Bando, Yoshio ; Huang, Yang ; Tang, Chengchun ; Dierre, Benjamin ; Sekiguchi, Takashi ; Golberg, Dmitri
Author_Institution
Int. Center for Mater. Nanoarchitectonics (MANA), Nat. Inst. for Mater. Sci. (NIMS), Ibaraki, Japan
fYear
2010
Firstpage
132
Lastpage
133
Abstract
We report on a pioneering fabrication of BN layers-sheathed CaS:Eu nanowires via a one-step and catalyst-free method. The CaS:Eu nanowires are sheathed over the entire length with thin BN layers, which effectively prevent the luminescence material decomposition. High-spatial resolution cathodoluminescence investigations on individual nanowires reveal a red light-emitting band and a spatial variation of luminescence from the nanowire surfaces to their cores. The attractive luminescence properties are expected to become valuable not only with respect to fundamental research but also for a design of novel optoelectronic nanodevices.
Keywords
III-V semiconductors; boron compounds; calcium compounds; cathodoluminescence; decomposition; europium; nanofabrication; nanowires; phosphors; semiconductor quantum wires; wide band gap semiconductors; CaS:Eu-BN; catalyst-free method; high-spatial resolution cathodoluminescence; luminescence material decomposition; one-step method; optoelectronic nanodevice design; red light-emitting band; sheathed nanowires; structural characterization; Content addressable storage; Luminescence; Materials science and technology; Nanobioscience; Nanomaterials; Nanostructured materials; Nanowires; Scanning electron microscopy; Spectroscopy; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424577
Filename
5424577
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