Title :
Design of optical assistance in nano-scale fabrication for the flexible display panels
Author_Institution :
Dept. of Digital Content Design, Nat. Taipei Univ. of Educ., Taipei, Taiwan
Abstract :
The low yield of the In2O3SnO2 nanostructures during the production of optoelectronic semiconductor is easily seen. A new design of optical assistance module uses an excimer irradiation of deep ultraviolet ray to assist in micro electroetching process as a nano-scale reuse fabrication for the flexible display panels was developed to effectively remove the defective In2O3SnO2 nanostructures from the surface of the optical PET-diaphragm (PET) of the e-paper and to put the substrate of PET-diaphragm back into the production line again. This study uses 172nm excimer light to promote the removal efficiency for the In2O3SnO2 nanostructures. For executing the etching-process of the reuse fabrication, through the excimer irradiation proposed, the In2O3SnO2 stubborn thin-films were easily broken up from the layer´s compositions to the nano-particles and escaped from the PET substrate quickly and cleanly. The required time is shortened by irradiating with the excimer irradiation before the etching processing In2O3SnO2 layers than that of without the excimer irradiating under the similar processing conditions. It is also proved that the excimer irradiation is absolutely to promote the etching effects for the designed tool to efficiently strip away the In2O3SnO2 nanostructures.
Keywords :
diaphragms; etching; flexible displays; indium compounds; micromachining; nanofabrication; thin films; tin compounds; ultraviolet radiation effects; In2O3SnO2; deep ultraviolet ray excimer irradiation; e-paper; flexible display panels; microelectroetching process; nanoparticles; nanoscale fabrication; nanoscale reuse fabrication; nanostructures; optical PET-diaphragm; optical assistance design; optical assistance module; optoelectronic semiconductor; thin films; wavelength 172 nm; Displays; Etching; Optical design; Optical device fabrication; Positron emission tomography; Production; Semiconductor nanostructures; Strips; Substrates; Thin films;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424580