Graphene/InN and Graphene/MoS2 heterojunctions: Characterization and sensing applications

Author

Jahangir, I. ; Wilson, A. ; Singh, A.K. ; Sbrockey, N. ; Coleman, E. ; Tompa, G.S. ; Koley, G.

Author_Institution

Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA

fYear

2014

fDate

18-21 Aug. 2014

Firstpage

1000

Lastpage

1003

Abstract

In this work, graphene/InN and graphene/MoS₂ thin film heterostructure based diode sensors are demonstrated. InN thin film is grown on GaN/sapphire substrate, MoS₂ is synthesized on SiO₂ by direct reaction between Mo and S, and CVD grown graphene is then transferred on either of them to make a graphene/InN(MoS₂) diode structure. Electrical characterization of both devices shows good rectifying behavior across the heterojunctions. Preliminary experiments with trace amount of acetone vapor and NO₂/NH₃ gas down to 30 ppb concentration show highly promising results. The functionality of these sensors depends on the presence of a tunable Schottky barrier formed between graphene and another thin film material that can be modulated by different analyte gas molecules or external stress.

Keywords

Schottky barriers; chemical vapour deposition; diodes; graphene; indium compounds; inorganic compounds; molybdenum compounds; thin film sensors; CVD grown graphene; GaN/sapphire substrate; InN; MoS₂; acetone vapor; analyte gas molecule; chemical vapor deposition; electrical characterization; external stress; rectifying behavior; thin film heterostructure diode sensor; tunable Schottky barrier; Films; Graphene; Heterojunctions; Sensitivity; Sensors; Substrates; Graphene; InN thin film; MoS2; gas sensing; heterostructure;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on

Conference_Location

Toronto, ON

Type

conf

DOI

10.1109/NANO.2014.6968176

Filename

6968176