Title :
Graphene/InN and Graphene/MoS2 heterojunctions: Characterization and sensing applications
Author :
Jahangir, I. ; Wilson, A. ; Singh, A.K. ; Sbrockey, N. ; Coleman, E. ; Tompa, G.S. ; Koley, G.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
In this work, graphene/InN and graphene/MoS2 thin film heterostructure based diode sensors are demonstrated. InN thin film is grown on GaN/sapphire substrate, MoS2 is synthesized on SiO2 by direct reaction between Mo and S, and CVD grown graphene is then transferred on either of them to make a graphene/InN(MoS2) diode structure. Electrical characterization of both devices shows good rectifying behavior across the heterojunctions. Preliminary experiments with trace amount of acetone vapor and NO2/NH3 gas down to 30 ppb concentration show highly promising results. The functionality of these sensors depends on the presence of a tunable Schottky barrier formed between graphene and another thin film material that can be modulated by different analyte gas molecules or external stress.
Keywords :
Schottky barriers; chemical vapour deposition; diodes; graphene; indium compounds; inorganic compounds; molybdenum compounds; thin film sensors; CVD grown graphene; GaN/sapphire substrate; InN; MoS2; acetone vapor; analyte gas molecule; chemical vapor deposition; electrical characterization; external stress; rectifying behavior; thin film heterostructure diode sensor; tunable Schottky barrier; Films; Graphene; Heterojunctions; Sensitivity; Sensors; Substrates; Graphene; InN thin film; MoS2; gas sensing; heterostructure;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968176
