• DocumentCode
    1658571
  • Title

    Field emission characteristics of different surface morphologies of ZnO nanostructures formed on carbon nanotubes

  • Author

    Lee, Kuei-Yi ; Lian, Huan-Bin ; Li, Kuan-Wei ; Cai, Jhen-Hong ; Wang, Yao-Te

  • Author_Institution
    Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    714
  • Lastpage
    715
  • Abstract
    The zinc oxide (ZnO) nanostructure grown onto the carbon nanotube (CNT) surface could enhance the CNT FE characteristics. However, the ZnO nanostructure morphology is an important parameter to decide the FE enhancement. This study used thermal chemical vapor deposition (TCVD) to form ZnO nanostructure onto CNT bundle surface, and adjust the distance (D) between the CNT bundle and the zinc acetate (zinc source) to control the surface morphology of ZnO nanostructures. Transmission electron microscopy (TEM) images showed that the ZnO nanostructures were grown onto the CNT bundle surface uniformly. The FE results show that the optimal D was 32 cm with a tapered shape and the thickness of ZnO nanostructures was about 50 nm, which achieved the lowest threshold electric field. In addition, the ZnO-coated CNT bundles exhibited a good FE uniformity and stable current density.
  • Keywords
    II-VI semiconductors; carbon nanotubes; chemical vapour deposition; field emission; nanofabrication; nanostructured materials; semiconductor growth; surface morphology; transmission electron microscopy; zinc compounds; C; CNT bundle; ZnO; ZnO-C; carbon nanotube surface; current density; field emission; nanostructure morphology; surface morphology; tapered shape; thermal chemical vapor deposition; threshold electric field; transmission electron microscopy; zinc acetate; zinc oxide nanostructure growth; zinc source; Carbon nanotubes; Chemical vapor deposition; Iron; Lithography; Scanning electron microscopy; Semiconductor nanostructures; Substrates; Surface morphology; Transmission electron microscopy; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424584
  • Filename
    5424584