DocumentCode
1658571
Title
Field emission characteristics of different surface morphologies of ZnO nanostructures formed on carbon nanotubes
Author
Lee, Kuei-Yi ; Lian, Huan-Bin ; Li, Kuan-Wei ; Cai, Jhen-Hong ; Wang, Yao-Te
Author_Institution
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fYear
2010
Firstpage
714
Lastpage
715
Abstract
The zinc oxide (ZnO) nanostructure grown onto the carbon nanotube (CNT) surface could enhance the CNT FE characteristics. However, the ZnO nanostructure morphology is an important parameter to decide the FE enhancement. This study used thermal chemical vapor deposition (TCVD) to form ZnO nanostructure onto CNT bundle surface, and adjust the distance (D) between the CNT bundle and the zinc acetate (zinc source) to control the surface morphology of ZnO nanostructures. Transmission electron microscopy (TEM) images showed that the ZnO nanostructures were grown onto the CNT bundle surface uniformly. The FE results show that the optimal D was 32 cm with a tapered shape and the thickness of ZnO nanostructures was about 50 nm, which achieved the lowest threshold electric field. In addition, the ZnO-coated CNT bundles exhibited a good FE uniformity and stable current density.
Keywords
II-VI semiconductors; carbon nanotubes; chemical vapour deposition; field emission; nanofabrication; nanostructured materials; semiconductor growth; surface morphology; transmission electron microscopy; zinc compounds; C; CNT bundle; ZnO; ZnO-C; carbon nanotube surface; current density; field emission; nanostructure morphology; surface morphology; tapered shape; thermal chemical vapor deposition; threshold electric field; transmission electron microscopy; zinc acetate; zinc oxide nanostructure growth; zinc source; Carbon nanotubes; Chemical vapor deposition; Iron; Lithography; Scanning electron microscopy; Semiconductor nanostructures; Substrates; Surface morphology; Transmission electron microscopy; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424584
Filename
5424584
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