Title :
Circuit sensitivity analysis in terms of process parameters
Author :
van Dort, M.J. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A new methodology for sensitivity analysis at circuit level in terms of process parameters is presented. Response functions for long-channel MOSFETs are found from process and device simulations. Responses for a device with arbitrary dimensions are subsequently calculated using the MOS MODEL 9 scaling rules
Keywords :
CMOS integrated circuits; MOSFET; circuit analysis computing; sensitivity analysis; MOS MODEL 9 scaling rules; circuit sensitivity analysis; long-channel MOSFET; process parameters; response functions; short-channel MOSFET; Analytical models; Circuit simulation; Databases; MOSFETs; Packaging; Response surface methodology; Ring oscillators; Semiconductor device modeling; Sensitivity analysis; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499371
