Title :
Efficient non-quasi-static MOSFETs model for circuit simulation
Author :
Dubois, Emmanuel ; Robilliart, Etienne
Author_Institution :
IEMN/ISEN, CNRS, Villeneuve d´´Ascq, France
Abstract :
A fast numerical resolution of the Poisson and current continuity equations is used to model non-quasi-static effects in MOS circuits under fast switching conditions. The resulting model is continuous over all regimes of operation and accounts for the non-instantaneous redistribution of the channel charge. The capabilities of this modelling approach are exemplified through the simulation of current mode analog circuits
Keywords :
MOSFET; MOSFET circuits; circuit analysis computing; semiconductor device models; MOS circuits; Poisson equations; channel charge; circuit simulation; current continuity equations; current mode analog circuits; fast switching conditions; nonquasi-static MOSFET model; Analog circuits; Charge carrier processes; Circuit simulation; Convergence; Degradation; Frequency; MOSFET circuits; Poisson equations; Predictive models; Switching circuits;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499372
