• DocumentCode
    1658687
  • Title

    Modeling of 3-D trench structures with corrected effective medium approximation for model-based infrared reflectrometry

  • Author

    Zhang, Chuanwei ; Liu, Shiyuan ; Shi, Tielin

  • Author_Institution
    Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
  • fYear
    2010
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    Model-based infrared reflectrometry (MBIR) has been introduced recently for measuring deep trench structures in microelectronics. The success of this technique relies heavily on accurate modeling and fast calculation of the infrared metrology process, which still remains as one challenge. In this paper, we propose a modeling method named corrected effective medium approximation (CEMA) for accurate and fast reflectivity calculation of three-dimensional (3-D) trench structures. The independence of the CEMA on trench depth, azimuth of incidence and the polarization state has been investigated to demonstrate the validity of the CEMA.
  • Keywords
    integrated circuit measurement; integrated circuit modelling; isolation technology; 3D trench structures; corrected effective medium approximation; incidence azimuth; microelectronics; model-based infrared reflectrometry; polarization state; reflectivity calculation; trench depth; Azimuth; Equations; Metrology; Optical films; Optical polarization; Optical refraction; Optical variables control; Reflectivity; Refractive index; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424588
  • Filename
    5424588