DocumentCode
1658687
Title
Modeling of 3-D trench structures with corrected effective medium approximation for model-based infrared reflectrometry
Author
Zhang, Chuanwei ; Liu, Shiyuan ; Shi, Tielin
Author_Institution
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2010
Firstpage
146
Lastpage
147
Abstract
Model-based infrared reflectrometry (MBIR) has been introduced recently for measuring deep trench structures in microelectronics. The success of this technique relies heavily on accurate modeling and fast calculation of the infrared metrology process, which still remains as one challenge. In this paper, we propose a modeling method named corrected effective medium approximation (CEMA) for accurate and fast reflectivity calculation of three-dimensional (3-D) trench structures. The independence of the CEMA on trench depth, azimuth of incidence and the polarization state has been investigated to demonstrate the validity of the CEMA.
Keywords
integrated circuit measurement; integrated circuit modelling; isolation technology; 3D trench structures; corrected effective medium approximation; incidence azimuth; microelectronics; model-based infrared reflectrometry; polarization state; reflectivity calculation; trench depth; Azimuth; Equations; Metrology; Optical films; Optical polarization; Optical refraction; Optical variables control; Reflectivity; Refractive index; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424588
Filename
5424588
Link To Document