• DocumentCode
    1658698
  • Title

    1310nm Silicon Evanescent Laser

  • Author

    Chang, Hsu-Hao ; Fang, Alexander W. ; Sysak, Matthew N. ; Park, Hyundai ; Jones, Richard ; Cohen, Oded ; Raday, Omri ; Paniccia, Mario J. ; Bowers, John E.

  • Author_Institution
    ECE Dept., California Univ., Santa Barbara, CA
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    An electrically pumped 1310 nm silicon evanescent laser (SEL) is demonstrated utilizing the hybrid silicon evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.
  • Keywords
    elemental semiconductors; laser beams; optical fabrication; semiconductor lasers; silicon; waveguide lasers; continuous wave; current 30 mA; electrically pumped; hybrid silicon evanescent waveguide platform; maximum output power; power 5.5 mW; silicon evanescent laser; threshold current; wavelength 1310 nm; III-V semiconductor materials; Optical pumping; Optical surface waves; Optical waveguides; Power generation; Pump lasers; Quantum well lasers; Silicon; Wafer bonding; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347657
  • Filename
    4347657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1658698