A physically based device model for fully depleted and nearly fully depleted SOI MOSFET

Author

Banna, Srinivasa R. ; Chan, Philip C.H. ; Chan, Mansun ; Ko, Ping K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

1995

Firstpage

949

Lastpage

952

Abstract

An accurate submicron MOSFET device model for Silicon-On-Insulator (SOI) technology suitable for analog as well as digital applications has been developed. In developing this model care has been taken in retaining the basic functional form of physical models while improving the model accuracy. In addition to the commonly included effects in the SOI MOSFET model, we have given careful consideration to source/drain parasitic resistance, kink effect, self-heating and model continuity. The accuracy of the model is validated with experimental data and found to be in good agreement

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; SOI MOSFET; Si; fully depleted devices; kink effect; model continuity; nearly fully depleted devices; physically based device model; self-heating; source/drain parasitic resistance; submicron MOSFET device model; CMOS technology; Immune system; Impact ionization; Intrusion detection; MOSFET circuits; Semiconductor device modeling; Surface resistance; Temperature; Threshold voltage; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499373

Filename

499373