Impact of geometry aspect ratio on 10-nm gate-all-around silicon-germanium nanowire field effect transistors

In this paper, we study electrical characteristics of gate-all-around (GAA) silicon-germanium (SiGe) nanowire field effect transistors (NWFETS) with different aspect ratio (AR) of channel. Device characteristics: the subthreshold swing (SS), the drain induced barrier lowering (DIBL), and the I_ON/I_OFF ratio are simulated by using three-dimensional quantum mechanically corrected device simulation. Electrical characteristics of 10-nm-gate GAA Si_1-xGe_x NWFET devices are explored with respect to different thickness of SiGe and Ge´s mole fraction. It is investigated that an ellipse-shaped channel with a small aspect ratio possesses better DC characteristics, compared with the one which has large AR due to its good gate controllability.