Title :
InP-based Membrane Photodetectors for Optical Interconnects to Si
Author :
Binetti, P.R.A. ; Leijtens, X.J.M. ; Nikoufard, M. ; de Vries, T. ; Oei, Y.S. ; Di Cioccio, L. ; Fedeli, J.M. ; Lagahe, C. ; Orobtchouk, R. ; Seassal, C. ; Van Campenhout, J. ; Van Thourhout, D. ; van Veldhoven, P.J. ; Nötzel, R. ; Smit, M.K.
Author_Institution :
COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven
Abstract :
We present the design, fabrication and a characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0.45 A/W. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
Keywords :
III-V semiconductors; elemental semiconductors; indium compounds; integrated optics; integrated optoelectronics; membranes; optical fabrication; optical interconnections; optical losses; optical waveguides; photodetectors; silicon; silicon-on-insulator; InP; InP-based membrane photodetectors; SOI wafer; Si-SiO2; Si-wiring photonic circuit; detector respon-sivity; electronic IC processing; optical interconnects; photonic device fabrication; wafer scale processing; waveguide losses; Biomembranes; Detectors; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Optical coupling; Optical interconnections; Optical waveguides; Photodetectors; Photonic integrated circuits; InGaAs/InP; Optical Interconnects; PICMOS; Photodetector;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347658
