Title :
Heterogeneous Integration of III-V Active Devices on a Silicon-on-Insulator Photonic Platform
Author :
Roelkens, G. ; Brouckaert, J. ; Campenhout, Van J. ; Thourhout, Van D. ; Baets, R.
Author_Institution :
Photonics Res. Group, Ghent Univ., Ghent
Abstract :
We present the heterogeneous integration of III-V active opto-electronic devices on top of a silicon-on-insulator photonic integrated circuit. This is achieved by adhesive die-to-wafer bonding of an unprocessed InP/InGaAsP epitaxial layer structure, after which laser diodes and photodetectors were fabricated in the bonded layer and optically coupled to the underlying silicon-on-insulator waveguide circuit.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical couplers; optical fabrication; photodetectors; semiconductor lasers; silicon-on-insulator; wafer bonding; III-V active devices; InP-InGaAsP; InP-InGaAsP epitaxial layer structure; die-to-wafer bonding; laser diodes; photodetectors; photonic integrated circuit; silicon-on-insulator photonic platform; Bonding; Diode lasers; Epitaxial layers; III-V semiconductor materials; Indium phosphide; Optical waveguides; Optoelectronic devices; Photodetectors; Photonic integrated circuits; Silicon on insulator technology;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347659
