An effective cross-talk isolation structure for power IC applications

Author

Chan, Wilson W T ; Sin, Johnny K O ; Wong, S. Simon

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

1995

Firstpage

971

Lastpage

974

Abstract

The simple and effective cross-talk isolation structure consists of an isolator and a collector, and is placed in the epitaxial layer between the CMOS structure and the power device. Results show that, with the use of the isolation structure, operating current of the body diode of the LDMOST can be improved by 16 times and operating current of the LIGBT can be improved by 5 times before CMOS latchup in the control circuit occurs. For dynamic interaction between integrated LIGBTs, 8 times reduction in current surge in the adjacent device during turn-off transient is observed

Keywords

CMOS analogue integrated circuits; crosstalk; integrated circuit design; integrated circuit noise; isolation technology; minority carriers; power integrated circuits; transient analysis; CMOS latchup; CMOS structure; LDMOST body diode; LIGBT; collector; cross-talk isolation structure; current surge reduction; dynamic interaction; epitaxial layer; isolator; minority carrier current flow; operating current; power IC; turn-off transient; Diodes; Epitaxial layers; Fabrication; Isolators; Low voltage; Power engineering and energy; Power integrated circuits; Silicon compounds; Substrates; Surges;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499378

Filename

499378