Title :
An effective cross-talk isolation structure for power IC applications
Author :
Chan, Wilson W T ; Sin, Johnny K O ; Wong, S. Simon
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
The simple and effective cross-talk isolation structure consists of an isolator and a collector, and is placed in the epitaxial layer between the CMOS structure and the power device. Results show that, with the use of the isolation structure, operating current of the body diode of the LDMOST can be improved by 16 times and operating current of the LIGBT can be improved by 5 times before CMOS latchup in the control circuit occurs. For dynamic interaction between integrated LIGBTs, 8 times reduction in current surge in the adjacent device during turn-off transient is observed
Keywords :
CMOS analogue integrated circuits; crosstalk; integrated circuit design; integrated circuit noise; isolation technology; minority carriers; power integrated circuits; transient analysis; CMOS latchup; CMOS structure; LDMOST body diode; LIGBT; collector; cross-talk isolation structure; current surge reduction; dynamic interaction; epitaxial layer; isolator; minority carrier current flow; operating current; power IC; turn-off transient; Diodes; Epitaxial layers; Fabrication; Isolators; Low voltage; Power engineering and energy; Power integrated circuits; Silicon compounds; Substrates; Surges;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499378
