Title :
Complementary MOS structures for common mode EMI reduction
Author :
Tran, Manh Hung ; Crebier, Jean-Christophe
Author_Institution :
Grenoble Electr. Eng. Lab. (G2ELab), Grenoble Inst. of Technol., St. Martin d´´Heres, France
Abstract :
The paper deals with the management and the reduction of conducted common mode EMI noise in power converters. Especially, it is presented how complementary P-N MOSFET structures, used in a specific manner, are able of great and natural common mode current reductions. The advantages obtained by the use of complementary MOSFET topologies are balanced with the additional conduction losses that P MOSFETs are responsible of. The paper presents these issues based on simulation and practical results.
Keywords :
CMOS integrated circuits; electromagnetic interference; network topology; power convertors; P-N MOSFET structures; common mode EMI reduction; complementary MOS structures; power converters; Circuit topology; Electromagnetic interference; Inverters; Leg; MOS capacitors; MOSFET circuits; Noise reduction; Passive filters; Power electronics; Switched-mode power supply; EMC/EMI; MOSFET; efficiency;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
