Title :
Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform
Author :
Wang, J. ; Loh, W.-Y. ; Zang, H. ; Yu, M.B. ; Chua, K.T. ; Loh, T.H. ; Ye, J.D. ; Yang, R. ; Wang, X.L. ; Lee, S.J. ; Cho, B.J. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; germanium; hole mobility; integrated optoelectronics; p-i-n photodiodes; photodetectors; silicon; Ge pMOSFET; Si-Ge; advanced Ge-CMOS platform; current 0.4 nA; frequency 5 GHz; hole mobility; low dark current; monolithic integration; p-i-n photodetector; tensile-strained germanium photodetector; Annealing; Dark current; Detectors; Epitaxial growth; Germanium silicon alloys; MOSFET circuits; PIN photodiodes; Photodetectors; Silicon germanium; Temperature;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347664
