Title :
Spectral responsivity of vertical p-i-n photodiode of selectively grown Ge on silicon-on-insulator (SOI) platform
Author :
Park, Sungbong ; Ishikawa, Yasuhiko ; Tsuchizawa, Tai ; Watanabe, Toshifumi ; Yamada, Koji ; Itabashi, Seiichi ; Wada, Kazumi
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo
Abstract :
We demonstrated vertical Ge p-i-n photodiodes on an SOI substrate by selective epitaxial growth. It is strongly suggested from the spectral responsivity that strain in selective Ge mesas would be relieved because of a small and stripe shape of Ge mesas.
Keywords :
epitaxial growth; p-i-n photodiodes; silicon-on-insulator; Ge-Si; selective epitaxial growth; silicon-on-insulator; spectral responsivity; vertical p-i-n photodiode; Absorption; Annealing; Capacitive sensors; Epitaxial growth; PIN photodiodes; Photonics; Silicon on insulator technology; Substrates; Temperature; Tensile strain;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347665
