Gas Cluster Ion Beam Processing for Si Photonics

Author

Toyoda, N. ; Yamada, I. ; Akiyama, S. ; Kimerling, L.C. ; Ishikawa, Y. ; Wada, K.

Author_Institution

Grad. Sch. of Eng., Hyogo Univ., Himeji

fYear

2007

Firstpage

1

Lastpage

3

Abstract

Gas cluster ion beam (GCIB) process is applied for surface smoothing of one dimensional photonic band gap structure. After argon GCIB irradiations, hillocks on the Si₃N₄ surface were preferentially removed and smooth surface was realized. Reflectance spectra of PBG structure after Ar-GCIB irradiation was much closer to that of the theoretical line than that of the as-deposited sample. GCIB process will be a candidate for precise pattern formation which is required for Si micro photonics.

Keywords

elemental semiconductors; integrated optics; ion beam applications; micro-optics; pattern formation; photonic band gap; reflectivity; silicon; surface treatment; Si; Si photonics; Si₃N₄; argon GCIB irradiations; gas cluster ion beam processing; microphotonics; pattern formation; photonic band gap; reflectance spectra; surface smoothing; Acceleration; Etching; Ion beams; Optical materials; Optical surface waves; Photonic integrated circuits; Plasma accelerators; Rough surfaces; Smoothing methods; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2007 4th IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

978-1-4244-0934-1

Type

conf

DOI

10.1109/GROUP4.2007.4347666

Filename

4347666