Title :
Gas Cluster Ion Beam Processing for Si Photonics
Author :
Toyoda, N. ; Yamada, I. ; Akiyama, S. ; Kimerling, L.C. ; Ishikawa, Y. ; Wada, K.
Author_Institution :
Grad. Sch. of Eng., Hyogo Univ., Himeji
Abstract :
Gas cluster ion beam (GCIB) process is applied for surface smoothing of one dimensional photonic band gap structure. After argon GCIB irradiations, hillocks on the Si3N4 surface were preferentially removed and smooth surface was realized. Reflectance spectra of PBG structure after Ar-GCIB irradiation was much closer to that of the theoretical line than that of the as-deposited sample. GCIB process will be a candidate for precise pattern formation which is required for Si micro photonics.
Keywords :
elemental semiconductors; integrated optics; ion beam applications; micro-optics; pattern formation; photonic band gap; reflectivity; silicon; surface treatment; Si; Si photonics; Si3N4; argon GCIB irradiations; gas cluster ion beam processing; microphotonics; pattern formation; photonic band gap; reflectance spectra; surface smoothing; Acceleration; Etching; Ion beams; Optical materials; Optical surface waves; Photonic integrated circuits; Plasma accelerators; Rough surfaces; Smoothing methods; Surface roughness;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347666
