• DocumentCode
    1658986
  • Title

    Enhanced magnetic properties in FePt (001) epitaxial thin films by Cu capping layer

  • Author

    Wei, D.H. ; Yao, Y.D.

  • Author_Institution
    Dept. of Mech. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    704
  • Lastpage
    705
  • Abstract
    FePt thin films with Cu capping layer have been fabricated in order to study the microstructure and magnetic properties at 300°C. The enhancement of the coercivity is due to the reduced exchange coupling of FePt magnetic grains originated from Cu atoms diffusion along grain boundaries. Studies of angular dependent coercivity show a tendency of a domain-wall motion shift toward rotation of reverse-domain type with Cu capping layer onto the FePt films. The intergrain interaction was confirmed from the Kelly-Henkel plot that indicated the strong exchange coupling between neighboring grains in the FePt films without Cu addition. On the other hand, negative ¿M value was obtained while the FePt films capped with Cu layer, indicating the Cu capping layer can lead to the reduction of intergrain exchange coupling thus presence of dipole interaction in the Cu/FePt epitaxial thin films.
  • Keywords
    coercive force; crystal microstructure; diffusion; exchange interactions (electron); iron alloys; magnetic epitaxial layers; platinum alloys; Cu atom diffusion; Cu capping layer; FePt; FePt(001) epitaxial thin films; FePt-Cu; Kelly-Henkel plot; angular dependent coercivity; copper addition; copper capping layer; dipole interaction; domain-wall motion shift; exchange coupling; grain boundaries; intergrain exchange coupling; intergrain interaction; magnetic grains; microstructure; temperature 300 degC; Atomic layer deposition; Coercive force; Couplings; Iron; Magnetic anisotropy; Magnetic films; Magnetic properties; Microstructure; Perpendicular magnetic anisotropy; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424599
  • Filename
    5424599