• DocumentCode
    1659035
  • Title

    Nano-data storage and lithography by near-field optics

  • Author

    Gan, Fuxi ; Wei, Jingsong

  • Author_Institution
    Shanghai Inst. of Opt. & Fine Mech., Chinese Acad. of Sci., Shanghai, China
  • fYear
    2010
  • Firstpage
    162
  • Lastpage
    163
  • Abstract
    With the development of information, the density and capacity of information storage devices are required to be higher, and the smallest information bit size will be reduced to below the 100 nm accordingly. For the optical data storage and random access memory, the smallest bit size is mainly determined by the optical diffraction limit, which leads to some difficulties to get nanometric information bit by traditional far-field optics method. In order to realize the nano-data storage, one must break the optical diffraction barrier. In this report, we look back the develop story of optical storage, and give novel near-field optics methods for realizing the nano-data storage and nanolithography.
  • Keywords
    nanoelectronics; nanolithography; optical storage; random-access storage; information storage devices; nanodata storage; nanolithography; near-field optics method; optical data storage; optical diffraction limit; Apertures; High speed optical techniques; Lenses; Lithography; Optical devices; Optical diffraction; Optical films; Optical recording; Optical surface waves; Probes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424600
  • Filename
    5424600