DocumentCode
1659055
Title
First observation of stimulated emission from current injected InGaN/AlGaN double-heterostructure diode
Author
Egawa, Takashi ; Murata, Yoshihiko ; Jimbo, Takashi ; Umeno, Masayoshi
Author_Institution
Res. Center for Micro-Structure Devices, Nagoya Inst. of Technol., Japan
fYear
1995
Firstpage
1005
Lastpage
1006
Abstract
We report the first observation of stimulated emission from the InGaN/AlGaN double-heterostructure diode under higher injected current at 300 K. This technique is very promising for room-temperature CW operation of blue laser diodes
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; stimulated emission; surface emitting lasers; 300 K; 380 nm; 400 to 1000 mA; 440 nm; InGaN-AlGaN; InGaN/AlGaN double-heterostructure diode; blue laser diodes; injected current; room-temperature CW operation; stimulated emission; surface emitting spectra; Aluminum gallium nitride; Artificial intelligence; Current measurement; Diode lasers; Gallium nitride; Impurities; Pulse measurements; Spontaneous emission; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499386
Filename
499386
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