Simulation studies of lateral and opposed contact GaAs photoconductive switch geometry for high power, UWB microwave applications

Summary form only given. The high-gain GaAs Photoconductive semiconductor switch (PCSS) has been studied, using a laser beam as the triggering source. The switch is an integrated component of a parallel plate radiation source, used for driving a TEM horn impulse-radiating antenna. Specifically, the response of a trap filled semiconductor with varying contact placements (lateral and opposed) and material properties have been simulated. The objectives are to identify parameters that would optimize the switch lifetime and hold-off voltage. Beam power and its incidence locations were also varied during the simulation process.