• DocumentCode
    1659091
  • Title

    Charge Transport and Electroluminescence in PECVD Grown Silicon-Nanocrystals-Based LEDs

  • Author

    Anopchenko, A. ; Prezioso, S. ; Gaburro, Z. ; Ferraioli, L. ; Pucker, G. ; Bellutti, P. ; Pavesi, L.

  • Author_Institution
    Dept. of Phys., Trento Univ., Trento
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Electrical carrier injection into PECVD grown silicon-nanocrystals-based LEDs was examined by I-V, C-V, and impedance measurements. Electroluminescence was measured as a function of gate AC frequency. The correlations between conduction mechanism and electroluminescence are discussed.
  • Keywords
    electric admittance measurement; electroluminescence; elemental semiconductors; light emitting diodes; nanostructured materials; nanotechnology; plasma CVD; semiconductor device measurement; silicon; LED; PECVD; Si; charge transport; electrical carrier injection; electroluminescence; silicon nanocrystals; Capacitance-voltage characteristics; Dielectric measurements; Electroluminescence; Integrated circuit measurements; Light emitting diodes; Low voltage; Nanocrystals; Silicon; Time measurement; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347670
  • Filename
    4347670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1659091