Title :
High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier
Author :
Burghartz, Joachim N. ; Soyuer, Mehmet ; Jenkins, Keith A. ; Hulvey, Michael D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper presents the highest Qs (up to 24) reported for inductors integrated by using standard silicon technology with multi-level interconnects, and the implementation of such an inductor in an integrated 675 MHz, 100 mW power amplifier
Keywords :
BiCMOS analogue integrated circuits; Q-factor; UHF integrated circuits; UHF power amplifiers; inductors; integrated circuit interconnections; silicon; 100 mW; 675 MHz; Si; high-Q inductors; integrated RF power amplifier; multilevel interconnects; standard Si interconnect technology; High power amplifiers; Inductance; Inductors; Integrated circuit interconnections; Microelectronics; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499389
