• DocumentCode
    1659092
  • Title

    High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier

  • Author

    Burghartz, Joachim N. ; Soyuer, Mehmet ; Jenkins, Keith A. ; Hulvey, Michael D.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1995
  • Firstpage
    1015
  • Lastpage
    1018
  • Abstract
    This paper presents the highest Qs (up to 24) reported for inductors integrated by using standard silicon technology with multi-level interconnects, and the implementation of such an inductor in an integrated 675 MHz, 100 mW power amplifier
  • Keywords
    BiCMOS analogue integrated circuits; Q-factor; UHF integrated circuits; UHF power amplifiers; inductors; integrated circuit interconnections; silicon; 100 mW; 675 MHz; Si; high-Q inductors; integrated RF power amplifier; multilevel interconnects; standard Si interconnect technology; High power amplifiers; Inductance; Inductors; Integrated circuit interconnections; Microelectronics; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499389
  • Filename
    499389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1659092