DocumentCode :
1659174
Title :
Suppression of Er optical de-activation using silicon-rich silicon nitride
Author :
Yang, Moon-Seung ; Kim, Kyung Joong ; Shin, Jung H.
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon
fYear :
2007
Firstpage :
1
Lastpage :
3
Abstract :
The effect of nitride passivation on the Si nanocluster -Er coupling and Er optical activity is investigated. Based on a comparison with Er doped Si-rich Si oxide (SRSO), breaking of nc-Si/Er coupling and Er de-activation in Si-rich Si nitride (SRSN) are strongly reduced.
Keywords :
elemental semiconductors; erbium; nanostructured materials; nitridation; optical rotation; passivation; silicon; silicon compounds; Si; SiN:Er; nanocluster; nitride passivation effect; optical de-activation; silicon-rich silicon nitride; Annealing; Erbium; Luminescence; Optical films; Optical sensors; Particle beam optics; Semiconductor films; Silicon; Stimulated emission; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
Type :
conf
DOI :
10.1109/GROUP4.2007.4347674
Filename :
4347674
Link To Document :
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