DocumentCode :
1659184
Title :
Characterization of plastically graded nanostructured material
Author :
Ruan, H.H. ; Chen, A.Y. ; Lu, J.
Author_Institution :
Dept. of Mech. Eng., Hong Kong Polytech. Univ., Kowloon, China
fYear :
2010
Firstpage :
166
Lastpage :
167
Abstract :
Nanostructured materials have attracted extensive research interest in the past decades due to their exceptionally high yielding strength. Among different processing technologies, one way is to induce surface nanostructures with the consequence of gradually changed microstructures and mechanical properties from the surface to the interior layer. In order to accurately quantify the depth-dependent constitutive law, the instrumented nanoindentation associated with the FEM-based inverse algorithm was developed in this paper. The linear relationship between the recovery energy ratio and the elastic representative strain is noted, in which the slope corresponds to the specific hardening coefficient. Therefore, besides the calculation of the representative stresses, the hardening coefficient can also be explicitly calculated from the energy recovery ratio. The whole flow behavior of a linear hardening material can then be quantified by a single Berkovich indent. The computational algorithm is well verified by virtual indentations and has been successfully applied to the surface mechanical attrition treated (SMATed) stainless steel for quantify its graded mechanical properties.
Keywords :
alloy steel; elasticity; finite element analysis; hardening; nanoindentation; plasticity; AISI304SS stainless steel; FEM-based inverse algorithm; FeCCrJk; depth-dependent constitutive law; elastic representative strain; energy recovery ratio; instrumented nanoindentation; linear hardening material; plastically graded nanostructured material; representative stresses; single Berkovich indent; specific hardening coefficient; surface mechanical attrition treated stainless steel; virtual indentations; Nanostructured materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424603
Filename :
5424603
Link To Document :
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