• DocumentCode
    1659184
  • Title

    Characterization of plastically graded nanostructured material

  • Author

    Ruan, H.H. ; Chen, A.Y. ; Lu, J.

  • Author_Institution
    Dept. of Mech. Eng., Hong Kong Polytech. Univ., Kowloon, China
  • fYear
    2010
  • Firstpage
    166
  • Lastpage
    167
  • Abstract
    Nanostructured materials have attracted extensive research interest in the past decades due to their exceptionally high yielding strength. Among different processing technologies, one way is to induce surface nanostructures with the consequence of gradually changed microstructures and mechanical properties from the surface to the interior layer. In order to accurately quantify the depth-dependent constitutive law, the instrumented nanoindentation associated with the FEM-based inverse algorithm was developed in this paper. The linear relationship between the recovery energy ratio and the elastic representative strain is noted, in which the slope corresponds to the specific hardening coefficient. Therefore, besides the calculation of the representative stresses, the hardening coefficient can also be explicitly calculated from the energy recovery ratio. The whole flow behavior of a linear hardening material can then be quantified by a single Berkovich indent. The computational algorithm is well verified by virtual indentations and has been successfully applied to the surface mechanical attrition treated (SMATed) stainless steel for quantify its graded mechanical properties.
  • Keywords
    alloy steel; elasticity; finite element analysis; hardening; nanoindentation; plasticity; AISI304SS stainless steel; FEM-based inverse algorithm; FeCCrJk; depth-dependent constitutive law; elastic representative strain; energy recovery ratio; instrumented nanoindentation; linear hardening material; plastically graded nanostructured material; representative stresses; single Berkovich indent; specific hardening coefficient; surface mechanical attrition treated stainless steel; virtual indentations; Nanostructured materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424603
  • Filename
    5424603