Title :
High-temperature stability performance of 4H-SiC Schottky diodes
Author :
Maset, E. ; Sanchis-Kilders, E. ; Jordán, J. ; Ejea, Juan B. ; Ferreres, A. ; Esteve, V. ; Millán, J. ; Godignon, P.
Author_Institution :
LEII, Electron. Eng. Dept., Univ. of Valencia, Burjassot, Spain
Abstract :
Silicon carbide 300 V-5 A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270degC during 600 hours has demonstrated the capability to operate up to 300degC. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface. In this paper we present the development and characterization of a 300 V Schottky silicon carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation.
Keywords :
Schottky diodes; power semiconductor diodes; semiconductor device metallisation; semiconductor device reliability; silicon compounds; thermal stability; 4H-SiC Schottky diodes; H-SiC; current 5 A; high-temperature stability; metallization; reliability; temperature 270 degC; time 600 hour; voltage 300 V; Degradation; Metallization; Schottky diodes; Semiconductor-metal interfaces; Silicon carbide; Stability; Stress; Temperature; Testing; Voltage; Aerospace; Discrete power device; Reliability; SiC-device; Thermal stress;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
