Title :
Electrical characteristics of Ga3Te2Sb12 with high thermal stability for pram
Author :
Kao, Kin-Fu ; Chu, Yung-Ching ; Tsai, Ming-Jinn ; Chin, Tsung-Shune
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., China
Abstract :
In this study we have investigated electrical characteristics of test cells of phase-change memory using the active materials of, respectively, Ga3Te2Sb12 and Ge2Sb2Te5. Results revealed that our Ga3Te2Sb12 device possesses an outstanding performance of a lower reset current. Beside, the archival retention for ten years can be safely stored at 180°C.
Keywords :
antimony compounds; chalcogenide glasses; electrical resistivity; gallium compounds; phase change materials; phase change memories; semiconductor thin films; tellurium compounds; thermal stability; GaTeSb; PRAM; electrical properties; phase-change memory; reset current; temperature 180 degC; thermal stability; Data engineering; Electric resistance; Electric variables; Materials science and technology; Phase change memory; Phase change random access memory; Sputtering; Temperature dependence; Thermal stability; Transistors;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424608
