Investigation of RF Avalanche Inductive Effect on Reduction of Intermodulation Distortion of MOSFETs Using Volterra Series Analysis

In this paper, reduction of intermodulation distortion (IMD) due to inductive behavior for radio frequency (RF) MOSFETs is explored using Volterra series based on a nonlinear model incorporating a physical inductive breakdown network for the first time. The calculated total magnitude of high-order nonlinearities is lower than individual results from a nonlinear transconductance and breakdown inductance. In addition, the analysis result shows that the phase difference between the nonlinear transconductance and the breakdown inductance is almost π. Cancellation between resistive nonlinearity and reactive nonlinearity from the inductance due to the avalanche delay is first reported. The input third-order intercept point (IIP 3) is improved at biases where the breakdown inductance nonlinearity dominates. Instead, linearity will decrease when the breakdown resistance dominates.