DocumentCode
1659402
Title
Electronic properties of gap nanowires of different shapes
Author
Srivastava, Prashant ; Singh, Satyendra ; Mishra, Abhay
Author_Institution
CNTL, ABV-Indian Inst. of Inf. Technol. & Manage. (IIITM), Gwalior, India
fYear
2010
Firstpage
177
Lastpage
178
Abstract
The electronic properties of very thin gallium phosphide nanowires of different shapes were studied using density functional theory in local density approximation. We consider four different shapes of nanowires viz. linear wire, zigzag wire, square wire and hexagonal wire. The geometry optimization and the stability of all nanowires were investigated. We explore the minimum energy configuration for all the structures. The present study reveals that all of the wires are stable but four atom square wire have greater stability in comparison to other structures. The analysis of density of states and band structure of optimized nanowires predicts that semiconducting nanowires may be metallic or semiconducting. This behavior entirely depends upon the geometrical structure.
Keywords
III-V semiconductors; band structure; density functional theory; electronic density of states; gallium compounds; nanowires; optimisation; GaP; band structure; density functional theory; density of states; electronic properties; geometry optimization; hexagonal wire; linear wire; local density approximation; semiconducting nanowires; square wire; zigzag wire; Gallium compounds; III-V semiconductor materials; Magnetic materials; Nanowires; Physics; Semiconductivity; Semiconductor materials; Shape; Stability; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424612
Filename
5424612
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