• DocumentCode
    1659402
  • Title

    Electronic properties of gap nanowires of different shapes

  • Author

    Srivastava, Prashant ; Singh, Satyendra ; Mishra, Abhay

  • Author_Institution
    CNTL, ABV-Indian Inst. of Inf. Technol. & Manage. (IIITM), Gwalior, India
  • fYear
    2010
  • Firstpage
    177
  • Lastpage
    178
  • Abstract
    The electronic properties of very thin gallium phosphide nanowires of different shapes were studied using density functional theory in local density approximation. We consider four different shapes of nanowires viz. linear wire, zigzag wire, square wire and hexagonal wire. The geometry optimization and the stability of all nanowires were investigated. We explore the minimum energy configuration for all the structures. The present study reveals that all of the wires are stable but four atom square wire have greater stability in comparison to other structures. The analysis of density of states and band structure of optimized nanowires predicts that semiconducting nanowires may be metallic or semiconducting. This behavior entirely depends upon the geometrical structure.
  • Keywords
    III-V semiconductors; band structure; density functional theory; electronic density of states; gallium compounds; nanowires; optimisation; GaP; band structure; density functional theory; density of states; electronic properties; geometry optimization; hexagonal wire; linear wire; local density approximation; semiconducting nanowires; square wire; zigzag wire; Gallium compounds; III-V semiconductor materials; Magnetic materials; Nanowires; Physics; Semiconductivity; Semiconductor materials; Shape; Stability; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424612
  • Filename
    5424612