DocumentCode
1659421
Title
The Effect of Negative Direct Current Bias on the Crystallization of nc-Si:H Films Prepared by Plasma Enhanced Chemical Vapor Deposition
Author
Slum, J.-H. ; Cho, N.H. ; Lee, E.H.
Author_Institution
Dept. of Mater. Sci. & Eng., Inha Univ., Inchon
fYear
2007
Firstpage
1
Lastpage
3
Abstract
Nanocrystalline Si thin films were prepared by PECVD. The effect of negative DC biases on the formation of Si nanocrystallites in the films and relevant optical features was investigated.
Keywords
crystallisation; elemental semiconductors; hydrogen; nanostructured materials; nanotechnology; plasma CVD; semiconductor thin films; silicon; PECVD; Si:H; crystallization; nanocrystalline thin films; negative direct current bias effect; plasma enhanced chemical vapor deposition; Chemical vapor deposition; Crystallization; Diffraction; Nanoscale devices; Optical devices; Optical films; Plasma chemistry; Semiconductor films; Semiconductor thin films; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347681
Filename
4347681
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