Title :
The magnetotransistor for 2-axis magnetic field measurement in CMOS technology
Author :
Leepattarapongpan, Chana ; Phetchakul, Toempong ; Pengpad, Puttapon ; Srihapat, Arckom ; Jeamsaksiri, Wutthinan ; Chaowicharat, Ekalak ; Hruanun, Charndet ; Poyai, Amporn
Author_Institution :
Dept. of Electron., King Mongkut´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
Abstract :
This paper presents a magnetotransistor for detecting magnetic field in vertical and lateral directions (BY and BZ) by relying on the difference between base and collector currents (ΔICB). It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. The experiment showed that, at 10 mA of biasing current, the BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.7 and 1.35 %/T, respectively. The sensitivity at emitter current 20mA are 0.55 and 0.7 %/T for vertical and lateral magnetic field directions, respectively. This research on the magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications.
Keywords :
CMOS integrated circuits; magnetic field measurement; magnetic sensors; semiconductor device manufacture; semiconductor device measurement; transistors; 2-axis magnetic field measurement; BY direction sensitivity; BZ direction sensitivity; CMOS fabrication technology; CMOS technology; base currents; biasing current; collector currents; current 10 mA; current 20 mA; device structure; emitter current; magnetic field directions; magnetic sensors; magnetotransistor; Magnetic circuits; Magnetic field measurement; Magnetic fields; Magnetic flux; Magnetic sensors; Sensitivity; HALL Effect; Lorentz force; Magnetotransistor;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2015 12th International Conference on
Conference_Location :
Hua Hin
DOI :
10.1109/ECTICon.2015.7206955
